Number of Drivers :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Input Type Operating Temperature Mounting Type Package / Case Supplier Device Package Voltage - Supply Channel Type Driven Configuration Number of Drivers Gate Type Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink) High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ)
GLOBAL STOCKS
IR21362PBF RFQ
RFQ
3,583
In-stock
Infineon Technologies IC DRIVER BRIDGE 3-PHASE 28-DIP - Obsolete Tube Inverting, Non-Inverting -40°C ~ 150°C (TJ) Through Hole 28-DIP (0.600", 15.24mm) 28-PDIP 11.5 V ~ 20 V 3-Phase Half-Bridge 6 IGBT, N-Channel MOSFET 0.8V, 3V 200mA, 350mA 600V 125ns, 50ns
TC1427CPAG RFQ
RFQ
1,179
In-stock
Microchip Technology IC MOSFET DVR 1.2A DUAL HS 8DIP - Obsolete Tube Non-Inverting 0°C ~ 70°C (TA) Through Hole 8-DIP (0.300", 7.62mm) 8-PDIP 4.5 V ~ 16 V Independent Low-Side 2 N-Channel, P-Channel MOSFET 0.8V, 3V 1.2A, 1.2A - 35ns, 25ns
MIC4421AZT
RFQ
1,353
In-stock
Microchip Technology IC MOSFET DVR HS 9A INV TO220-5 - Active Tube Inverting 0°C ~ 150°C (TJ) Through Hole TO-220-5 TO-220-5 4.5 V ~ 18 V Single Low-Side 1 N-Channel MOSFET 0.8V, 3V 9A, 9A - 20ns, 24ns
MIC4422AZT
RFQ
2,834
In-stock
Microchip Technology IC DRIVER MOSFET 9A LS TO220-5 - Active Tube Non-Inverting 0°C ~ 150°C (TJ) Through Hole TO-220-5 TO-220-5 4.5 V ~ 18 V Single Low-Side 1 N-Channel MOSFET 0.8V, 3V 9A, 9A - 20ns, 24ns
MIC4422AZN
RFQ
3,229
In-stock
Microchip Technology IC DRIVER MOSFET 9A LS 8-DIP - Active Tube Non-Inverting 0°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-PDIP 4.5 V ~ 18 V Single Low-Side 1 N-Channel MOSFET 0.8V, 3V 9A, 9A - 20ns, 24ns
IR2102PBF
RFQ
2,335
In-stock
Infineon Technologies IC DRIVER HIGH/LOW SIDE 8-DIP - Active Tube Inverting -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP 10 V ~ 20 V Independent Half-Bridge 2 IGBT, N-Channel MOSFET 0.8V, 3V 210mA, 360mA 600V 100ns, 50ns
MIC4421AZN
RFQ
756
In-stock
Microchip Technology IC MOSFET DVR HS 9A INV 8-DIP - Active Tube Inverting 0°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-PDIP 4.5 V ~ 18 V Single Low-Side 1 N-Channel MOSFET 0.8V, 3V 9A, 9A - 20ns, 24ns
MIC4421AYN
RFQ
2,188
In-stock
Microchip Technology IC MOSFET DVR HS 9A INV 8-DIP - Active Tube Inverting -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-PDIP 4.5 V ~ 18 V Single Low-Side 1 N-Channel MOSFET 0.8V, 3V 9A, 9A - 20ns, 24ns
Default Photo
RFQ
1,265
In-stock
IXYS Integrated Circuits Division IC GATE DVR 9A NON-INV TO220-5 - Active Tube Non-Inverting -55°C ~ 150°C (TJ) Through Hole TO-220-5 Formed Leads TO-220-5 4.5 V ~ 35 V Single Low-Side 1 IGBT, N-Channel, P-Channel MOSFET 0.8V, 3V 9A, 9A - 22ns, 15ns
Default Photo
RFQ
869
In-stock
IXYS Integrated Circuits Division IC GATE DVR 9A NON-INV TO220-5 - Active Tube Inverting -55°C ~ 150°C (TJ) Through Hole TO-220-5 TO-220-5 4.5 V ~ 35 V Single Low-Side 1 IGBT, N-Channel, P-Channel MOSFET 0.8V, 3V 9A, 9A - 22ns, 15ns
IXDI602PI
RFQ
1,222
In-stock
IXYS Integrated Circuits Division 2A 8 DIP DUAL INVERTING - Active Tube Inverting -55°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP 4.5 V ~ 35 V Independent Low-Side 2 IGBT, N-Channel, P-Channel MOSFET 0.8V, 3V 2A, 2A - 7.5ns, 6.5ns
IXDF602PI
RFQ
2,111
In-stock
IXYS Integrated Circuits Division 2A MOSFET 8 DIP DUAL INV/NON-INV - Active Tube Inverting, Non-Inverting -55°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP 4.5 V ~ 35 V Independent Low-Side 2 IGBT, N-Channel, P-Channel MOSFET 0.8V, 3V 2A, 2A - 7.5ns, 6.5ns
IR2136PBF
RFQ
3,680
In-stock
Infineon Technologies IC DRIVER BRIDGE 3-PHASE 28-DIP - Active Tube Inverting -40°C ~ 150°C (TJ) Through Hole 28-DIP (0.600", 15.24mm) 28-PDIP 10 V ~ 20 V 3-Phase Half-Bridge 6 IGBT, N-Channel MOSFET 0.8V, 3V 200mA, 350mA 600V 125ns, 50ns
IXDD609CI
RFQ
2,172
In-stock
IXYS Integrated Circuits Division IC GATE DVR 9A DUAL HS TO220-5 - Active Tube Non-Inverting -55°C ~ 150°C (TJ) Through Hole TO-220-5 TO-220-5 4.5 V ~ 35 V Single Low-Side 1 IGBT, N-Channel, P-Channel MOSFET 0.8V, 3V 9A, 9A - 22ns, 15ns
IR21271PBF
RFQ
3,488
In-stock
Infineon Technologies IC DRIVER 600V 200/420MA 8-DIP - Active Tube Non-Inverting -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP 9 V ~ 20 V Single High-Side or Low-Side 1 IGBT, N-Channel MOSFET 0.8V, 3V 250mA, 500mA 600V 80ns, 40ns
IR2127PBF
RFQ
1,905
In-stock
Infineon Technologies IC MOSFET DRIVER CUR-SENSE 8-DIP - Active Tube Non-Inverting -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP 12 V ~ 20 V Single High-Side or Low-Side 1 IGBT, N-Channel MOSFET 0.8V, 3V 250mA, 500mA 600V 80ns, 40ns
IXDN504PI RFQ
RFQ
2,502
In-stock
IXYS IC GATE DRIVER DUAL 4A 8-DIP - Obsolete Tube Non-Inverting -55°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-PDIP 4.5 V ~ 30 V Independent Low-Side 2 IGBT, N-Channel, P-Channel MOSFET 0.8V, 3V 4A, 4A - 9ns, 8ns
IXDN402PI RFQ
RFQ
2,186
In-stock
IXYS IC MOSFET DRVR DUAL 2A 8-DIP - Obsolete Tube Non-Inverting -55°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-PDIP 4.5 V ~ 35 V Independent Low-Side 2 IGBT, N-Channel, P-Channel MOSFET 0.8V, 3V 2A, 2A - 8ns, 8ns
IXDI504PI RFQ
RFQ
3,064
In-stock
IXYS IC GATE DRIVER DUAL 4A 8-DIP - Obsolete Tube Inverting -55°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-PDIP 4.5 V ~ 30 V Independent Low-Side 2 IGBT, N-Channel, P-Channel MOSFET 0.8V, 3V 4A, 4A - 9ns, 8ns
IXDI402PI RFQ
RFQ
3,179
In-stock
IXYS IC MOSFET DRVR DUAL 2A 8-DIP - Obsolete Tube Inverting -55°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-PDIP 4.5 V ~ 35 V Independent Low-Side 2 IGBT, N-Channel, P-Channel MOSFET 0.8V, 3V 2A, 2A - 8ns, 8ns
IXDF504PI RFQ
RFQ
2,137
In-stock
IXYS IC GATE DRIVER 4A 8-DIP - Obsolete Tube Inverting, Non-Inverting -55°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-PDIP 4.5 V ~ 30 V Independent Low-Side 2 IGBT, N-Channel, P-Channel MOSFET 0.8V, 3V 4A, 4A - 9ns, 8ns
IXDF402PI RFQ
RFQ
725
In-stock
IXYS IC MOSFET DRIVER DUAL 2A 8-DIP - Obsolete Tube Inverting, Non-Inverting -55°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-PDIP 4.5 V ~ 35 V Independent Low-Side 2 IGBT, N-Channel, P-Channel MOSFET 0.8V, 3V 2A, 2A - 8ns, 8ns
IXDE504PI RFQ
RFQ
3,476
In-stock
IXYS IC GATE DRIVER 4A 8-DIP - Obsolete Tube Inverting -55°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-PDIP 4.5 V ~ 30 V Independent Low-Side 2 IGBT, N-Channel, P-Channel MOSFET 0.8V, 3V 4A, 4A - 9ns, 8ns
IXDD504PI RFQ
RFQ
1,566
In-stock
IXYS IC GATE DRIVER 4A 8-DIP - Obsolete Tube Non-Inverting -55°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-PDIP 4.5 V ~ 30 V Independent Low-Side 2 IGBT, N-Channel, P-Channel MOSFET 0.8V, 3V 4A, 4A - 9ns, 8ns
IR21271 RFQ
RFQ
1,116
In-stock
Infineon Technologies IC DRIVER 600V 200/420MA 8-DIP - Obsolete Tube Non-Inverting -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP 9 V ~ 20 V Single High-Side or Low-Side 1 IGBT, N-Channel MOSFET 0.8V, 3V 250mA, 500mA 600V 80ns, 40ns
Default Photo RFQ
RFQ
2,355
In-stock
Infineon Technologies IC DRIVER HALF-BRIDGE 8-DIP - Obsolete Tube Non-Inverting -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP 10 V ~ 20 V Synchronous Half-Bridge 2 IGBT, N-Channel MOSFET 0.8V, 3V 210mA, 360mA 600V 100ns, 50ns
IR21014 RFQ
RFQ
2,829
In-stock
Infineon Technologies IC DRIVER HIGH/LOW SIDE 14-DIP - Obsolete Tube Non-Inverting -40°C ~ 150°C (TJ) Through Hole 14-DIP (0.300", 7.62mm) 14-DIP 10 V ~ 20 V Independent Half-Bridge 2 IGBT, N-Channel MOSFET 0.8V, 3V 210mA, 360mA 600V 100ns, 50ns
IR21362 RFQ
RFQ
3,229
In-stock
Infineon Technologies IC DRIVER BRIDGE 3-PHASE 28-DIP - Obsolete Tube Inverting, Non-Inverting -40°C ~ 150°C (TJ) Through Hole 28-DIP (0.600", 15.24mm) 28-PDIP 11.5 V ~ 20 V 3-Phase Half-Bridge 6 IGBT, N-Channel MOSFET 0.8V, 3V 200mA, 350mA 600V 125ns, 50ns
IR2128 RFQ
RFQ
633
In-stock
Infineon Technologies IC MOSFET DRIVER CUR-SENSE 8-DIP - Obsolete Tube Inverting -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP 12 V ~ 20 V Single High-Side or Low-Side 1 IGBT, N-Channel MOSFET 0.8V, 3V 250mA, 500mA 600V 80ns, 40ns
IR2122 RFQ
RFQ
3,217
In-stock
Infineon Technologies IC MOSFET DRIVER HIGH-SIDE 8-DIP - Obsolete Tube Inverting -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP 13 V ~ 20 V Single High-Side 1 IGBT, N-Channel MOSFET 0.8V, 3V 130mA, 130mA 600V 250ns, 250ns