Logic Voltage - VIL, VIH :
Current - Peak Output (Source, Sink) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Input Type Operating Temperature Mounting Type Package / Case Supplier Device Package Voltage - Supply Channel Type Driven Configuration Number of Drivers Gate Type Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink) High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ)
GLOBAL STOCKS
IRS2128PBF RFQ
RFQ
2,122
In-stock
Infineon Technologies IC DRIVER CURR SENSE 1CH 8-DIP - Obsolete Tube Inverting -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP 12 V ~ 20 V Single High-Side 1 IGBT, N-Channel MOSFET 0.8V, 2.5V 290mA, 600mA 600V 80ns, 40ns
IR2127PBF
RFQ
1,905
In-stock
Infineon Technologies IC MOSFET DRIVER CUR-SENSE 8-DIP - Active Tube Non-Inverting -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP 12 V ~ 20 V Single High-Side or Low-Side 1 IGBT, N-Channel MOSFET 0.8V, 3V 250mA, 500mA 600V 80ns, 40ns
IR2128 RFQ
RFQ
633
In-stock
Infineon Technologies IC MOSFET DRIVER CUR-SENSE 8-DIP - Obsolete Tube Inverting -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP 12 V ~ 20 V Single High-Side or Low-Side 1 IGBT, N-Channel MOSFET 0.8V, 3V 250mA, 500mA 600V 80ns, 40ns
IR2128PBF
RFQ
2,420
In-stock
Infineon Technologies IC MOSFET DRVR CURR SENSE 8DIP - Active Tube Inverting -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP 12 V ~ 20 V Single High-Side or Low-Side 1 IGBT, N-Channel MOSFET 0.8V, 3V 250mA, 500mA 600V 80ns, 40ns
IRS2127PBF
RFQ
1,764
In-stock
Infineon Technologies IC DVR CURR SENSE 1CH 600V 8DIP - Active Tube Non-Inverting -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP 12 V ~ 20 V Single High-Side 1 IGBT, N-Channel MOSFET 0.8V, 2.5V 290mA, 600mA 600V 80ns, 40ns
IR2127 RFQ
RFQ
1,788
In-stock
Infineon Technologies IC MOSFET DRIVER CUR-SENSE 8-DIP - Obsolete Tube Non-Inverting -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP 12 V ~ 20 V Single High-Side or Low-Side 1 IGBT, N-Channel MOSFET 0.8V, 3V 250mA, 500mA 600V 80ns, 40ns