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11 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Input Type | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Voltage - Supply | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||
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RFQ |
3,299
In-stock
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Infineon Technologies | IC DRIVER HALF-BRIDGE 8-SOIC | - | Obsolete | Tape & Reel (TR) | Non-Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 10 V ~ 20 V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 3V | 210mA, 360mA | 600V | 100ns, 50ns | |||
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RFQ |
706
In-stock
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Infineon Technologies | IC DRIVER HALF BRIDGE 600V 8SOIC | - | Obsolete | Tape & Reel (TR) | Inverting, Non-Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 10 V ~ 20 V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 3V | 210mA, 360mA | 600V | 100ns, 50ns | |||
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RFQ |
2,111
In-stock
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Infineon Technologies | IC DRIVER HIGH/LOW SIDE 8-SOIC | - | Obsolete | Tape & Reel (TR) | Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 10 V ~ 20 V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 3V | 210mA, 360mA | 600V | 100ns, 50ns | |||
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|
RFQ |
1,169
In-stock
|
Infineon Technologies | IC DRIVER HIGH/LOW SIDE 8-SOIC | - | Obsolete | Tape & Reel (TR) | Non-Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 10 V ~ 20 V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 3V | 210mA, 360mA | 600V | 100ns, 50ns | |||
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|
RFQ |
3,169
In-stock
|
Infineon Technologies | IC DRIVER HIGH/LOW SIDE 8-SOIC | - | Obsolete | Tape & Reel (TR) | Non-Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 10 V ~ 20 V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 3V | 210mA, 360mA | 600V | 100ns, 50ns | |||
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2,174
In-stock
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Infineon Technologies | IC DRIVER HALF BRIDGE 600V 8SOIC | - | Active | Tape & Reel (TR) | Inverting, Non-Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 10 V ~ 20 V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 3V | 210mA, 360mA | 600V | 100ns, 50ns | ||||
|
RFQ |
1,515
In-stock
|
Diodes Incorporated | IC GATE DRVR HALF-BRIDGE 8SO | - | Obsolete | Tape & Reel (TR) | Non-Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 10 V ~ 20 V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 210mA, 360mA | 600V | 100ns, 50ns | |||
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1,755
In-stock
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Infineon Technologies | IC DRIVER HIGH/LOW SIDE 8-SOIC | - | Active | Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 10 V ~ 20 V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 3V | 210mA, 360mA | 600V | 100ns, 50ns | ||||
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1,685
In-stock
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Infineon Technologies | IC DRIVER HIGH/LOW SIDE 8SOIC | - | Active | Tape & Reel (TR) | Non-Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 10 V ~ 20 V | Independent | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 3V | 210mA, 360mA | 600V | 100ns, 50ns | ||||
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3,674
In-stock
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Infineon Technologies | IC DRIVER HIGH/LOW SIDE 8SOIC | - | Active | Tape & Reel (TR) | Non-Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 10 V ~ 20 V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 3V | 210mA, 360mA | 600V | 100ns, 50ns | ||||
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3,484
In-stock
|
Infineon Technologies | IC HALF BRIDGE DRIVER 8SOIC | - | Active | Tape & Reel (TR) | Non-Inverting | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 10 V ~ 20 V | Synchronous | Half-Bridge | 2 | IGBT, N-Channel MOSFET | 0.8V, 3V | 210mA, 360mA | 600V | 100ns, 50ns | ||||
